Compositions for chemical-mechanical planarization of noble-metal-featured substrates, associated methods, and substrates produced by such methods

ABSTRACT

A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4. 
     A method for planarizing a substrate surface having a feature thereon comprising at least one noble metal, noble metal alloy, or noble metal oxide, or a combination thereof, comprises providing a composition or slurry comprising periodic acid and an abrasive in a combined amount sufficient to planarize the substrate surface, and polishing the surface with the slurry. A substrate produced by such a method is also provided.

RELATED APPLICATIONS

This is a continuation application of U.S. patent application Ser. No.10/057,206, filed Jan. 25, 2002, now, U.S. Pat. No. 7,524,346, which isherein incorporated by reference in its entirety.

BACKGROUND

1. Field of the Invention

The present invention relates generally to compositions forchemical-mechanical planarization, and more particularly to compositionsfor chemical-mechanical planarization of substrates(“noble-metal-featured substrates”) having surface features comprisingnoble metals, noble metal alloys, noble metal oxides, and combinationsthereof, associated methods, and substrates produced by such methods.

2. Description of Related Art

Chemical-Mechanical Planarization (also referred to asChemical-Mechanical Polishing), or CMP, is commonly used in themanufacture of semiconductor devices and denotes the process of removingmaterial and forming a substantially planar surface before additionallayers are deposited and/or additional patterning of the layers occurs.CMP processes have been extensively studied for use in semiconductorfabrication and constitute integral steps in many practical productionenvironments. However, CMP of metals has been studied most extensivelyin connection with metals such as tungsten, copper, aluminum, tantalum,among others, as well as oxides, nitrides and alloys thereof. See, forexample, Chemical Mechanical Planarization of Microelectronic Materials,by J. M. Steigerwald, S. P. Murarka and R. J. Gutmann (John Wiley & Sons1997), especially Chapters 5-8. In contrast, CMP of noble metals,including alloys and oxides thereof, is much less well studied. The term“noble metals” typically refers to less reactive metals such as gold,silver, platinum, iridium and other elements typically found in or nearGroup VIII of the periodic table.

Interest in noble metals, and the alloys and oxides thereof, isincreasing as such materials are useful as electrode and barriermaterials in the fabrication of some electronic devices such as Gigabit(10⁹ bit) DRAMs (dynamic random access memories) and FeRAMs(ferroelectric random access memories). Worldwide efforts are underwayto commercialize high dielectric constant and ferroelectric thin filmsfor use in capacitive elements as would be applied, for example, inadvanced DRAMs and FeRAMs. High dielectric constant materials such asBaSrTiO₃ (BST) can be used for forming capacitor dielectrics insubmicron integrated circuits (e.g. in DRAM storage capacitors, couplingcapacitors in general circuits, among other uses). Additionally,ferroelectric materials such as PbZrTiO₃ (PZT) and SrBi₂Ti₂O₉ that canstore charge for extended periods of time can be employed in thefabrication of non-volatile FeRAM memory elements. The chemicalproperties of these (and other) high dielectric constant andferroelectric materials typically require that they be used inconjunction with noble metals, noble metal oxides and/or noble metalalloys (including Pt, Ir, IrO₂, among others). Examples of the use ofhigh dielectric constant and/or ferroelectric materials in semiconductorfabrication and in conjunction with noble metals, noble metal alloys,and noble metal oxides, can be found in the following U.S. Pat. Nos.5,318,927; 5,527,423; 5,976,928; 6,169,305, and references citedtherein.

Conventional patterning of noble metals, noble metal alloys, and noblemetal oxides includes the use of dry etching processes. However, dryetching has several disadvantages including unfavorable taper angle,fence formation, and a tendency to produce residual particles leading tocontamination. Some of these disadvantages of conventional dry etchingare due to the predominantly physical rather than chemical mechanism formaterial removal. Physical removal of material is prone to the formationof unwanted structures at the edges of the structures, such aselectrodes, being etched.

SUMMARY

The present invention provides compositions and processes for thechemical-mechanical planarization or polishing (CMP) of substrateshaving at least one surface feature or layer comprising a noble metal, anoble metal alloy, and/or a noble metal oxide, or any combinationthereof (sometimes referred to herein as noble metal features or thelike). Suitable noble metals, noble metal alloys, and/or noble metaloxides include metals from Group VIII of the periodic table and includein particular, Pt, Ir and IrO₂. Many of the noble-metal-containingsubstrate features contemplated are on the order of from about 300Angstroms (A) to about 1000 A thick. The compositions and processes ofthe present invention are suitable for use in applications such as thepolishing of these featured substrate surfaces at desirable polishingrates using standard CMP equipment. In such applications, a suitablepolishing rate may be from about 300 Angstroms per minute (A/min) toabout 2000 A/min, merely by way of example.

As used herein, the chemical-mechanical planarization or polishing of asubstrate having a metal feature or layer on its surface refers to thepolishing of the substrate surface until the metal feature or layer issubstantially coplanar with surrounding material, such as surroundingdielectric material, on the substrate. That is, the polishing of themetal-featured substrate continues until any metal excess issufficiently removed to provide a substantially uniform profile acrossthe substrate surface. By way of example, suitable surface uniformity(typically measured using known wafer profiling techniques) is reflectedby wafer-within-wafer non-uniformity (WWNU) values of less than about12%, preferably from about 4% to about 6%, or wafer-to-wafernon-uniformity (WTWNU) values of less than about 5%, preferably about3%. Typically, each fabrication lab has acceptable uniformity values foreach CMP process it uses, and generally prefers lower WWNU values orWTWNU values that indicate greater surface uniformity.

Preferably, the selectivity of the CMP composition used in thisplanarization or polishing process is high (at least greater than 1:1)in terms of the removal of metal relative to the removal of surroundingmaterial or dielectric, where suitable selectivity ranges or valuesdepend very much on the type of surrounding material or dielectric. Byway of example, suitable selectivity ratios (i.e., removal of metal toremoval of surrounding material or dielectric) may be on the order of100:1 for tetraethoxysilane (TEOS) and 20:1 for boron phosphoroussilicate glass (BPSG), though suitable ratios may be higher or lowerthan these particular ratios.

Once the metal feature is substantially coplanar with surroundingmaterial on the substrate surface, further polishing may take place.Preferably, the selectivity ratio of the CMP composition used in thisfurther polishing process is close to 1:1, such that dishing and erosionof the metal feature and the surrounding material is avoided orminimized. Typically, each fabrication lab has standards of acceptabledishing and erosion for the polished wafers (typically measured usingwafer profiling techniques), and generally prefers lower levels ofdishing and erosion that indicate greater surface quality.

An exemplary embodiment of the present invention is a composition forchemical-mechanical planarization that comprises periodic acid and anabrasive, wherein the periodic acid and the abrasive are present in acombined amount that is sufficient to planarize a substrate surfacehaving at least one feature or layer thereon comprising a noble metal, anoble metal alloy, a noble metal oxide, or any combination thereof. Inan embodiment of the composition of the present invention, the periodicacid is present in an amount in a range of from about 0.05 to about 0.3moles/kilogram, or preferably, from about 0.075 to about 0.175moles/kilogram, and the abrasive is present in an amount in a range offrom about 0.2 to about 6 weight percent, or preferably, from about 0.2to about 4 weight percent.

The abrasive component of the composition may be an abrasive materialhaving a Mohs hardness number of greater than about 6.5. For example,the abrasive may be one or more of alumina, silica, zirconia, spinel,zirconium nitride, and carbide. In an embodiment of the composition ofthe invention, the abrasive comprises alumina. By way of example, thealumina may be an alpha-alumina, a gamma-alumina, or a combinationthereof.

In other embodiments, the composition or slurry comprises a pH-adjustingagent or titration agent in an amount sufficient to cause the pH levelof the slurry to be in a desirable range. In various embodiments the pHrange is from about pH 5 to about pH 10, preferably, from about pH 7 toabout pH 9, or from about pH 1 to about pH 4, preferably from about pH 2to about pH 3. Suitable pH-adjusting agents include one or more of aquaternary amine and an inorganic base, such as tetramethylammoniumhydroxide, ammonium hydroxide, potassium hydroxide, and sodiumhydroxide. In still another embodiment, the composition furthercomprises a suspension agent, which is preferably a surfactant.

An exemplary embodiment of a method of the present invention forplanarizing a substrate surface having at least one feature or layerthereon comprising at least one noble metal, noble metal alloy, or noblemetal oxide, or any combination thereof. The method comprises providinga composition or slurry comprising periodic acid and an abrasive presentin a combined amount that is sufficient to planarize the substratesurface, and polishing the surface with the slurry. In an embodiment ofthe method, the periodic acid is present in an amount in a range of fromabout 0.05 to about 0.3 moles/kilogram, or preferably, from about 0.075to about 0.175 moles/kilogram, and the abrasive is present in an amountin a range of from about 0.2 to about 6 weight percent, or preferably,from about 0.2 to about 4 weight percent. In another embodiment of themethod of the invention, the abrasive comprises an abrasive materialdiscussed above, for example, alumina, whether alpha-alumina,gamma-alumina, or a combination thereof. In other embodiments, theslurry comprises a pH-adjusting agent or titration agent, also asdescribed above, such that the pH level of the slurry is in a desirablerange.

Use of the compositions and processes of the present invention mayreduce, minimize or eliminate imperfections, defects, corrosion,recession and/or erosion that might otherwise appear on the substratesurfaces. Merely by way of example, the compositions and processes ofthe present invention may be used to meet objectives such as providingmetal-featured substrates, such as Ir- or IrO₂-featured substrates, thathave a surface roughness of less than about 4 A and that aresubstantially corrosion-free, or providing metal-featured substratesthat have dishing and erosion values of much less than 1000 A, such asless than about 500 A, for example, about 300 A.

The present invention further encompasses a substrate produced by themethods disclosed herein. According to various embodiments of theinvention, the substrate is substantially planar followingchemical-mechanical polishing, has a WWNU of less than about 12%, and/orhas a WTWNU of less than about 5%.

DETAILED DESCRIPTION

Compositions, associated methods, and substrates produced by suchmethods, according to the present invention are set forth in thisdescription. In the examples set forth below, all numerical values andranges are approximate unless explicitly stated otherwise.

Ir Polishing Compositions

Composition A

A polishing composition (such as “Composition A”) useful for polishingiridium pursuant to some embodiments of the present invention iscomprised of an abrasive (typically an alumina) and periodic acid(H₅IO₆) in aqueous solution (advantageously in distilled or di-ionizedwater, referred to collectively herein as “DI” water) Periodic acid iscapable of participating in a fairly complex group of chemicalreactions. Periodic acid is a rather weak acid (K_(a)≈5.1×10⁻⁵) and astrong oxidizing agent under acidic conditions (E⁰=1.6 V). Depending onthe pH of the medium containing periodic acid, different reactivespecies can be called into play including H₅IO₆, H⁺, H₄IO₆ ⁻, IO₄ ⁻,H₃IO₆ ⁻². During the short contact time in typical CMP processing, theprimary periodic acid reaction is thought to be that represented belowin Equation 1 (Eq. 1).H₅IO₆+2e ⁻+2H⁺=HIO₃+3H₂O  Eq. 1.

The reaction represented in Equation 1 is believed to be the primary CMPreaction involving periodic acid, although additional or differentreactions may participate within the scope of the present invention.

Various CMP compositions are described herein in terms of the reactantsand other chemical components that are mixed or otherwise combined toform the desired CMP slurry. However, it is recognized that a complexset of chemical processes typically follows blending of the CMPcomponents that may destroy or alter, entirely or in part, one or moreof the blended components. The CMP solutions comprising some embodimentsof the present invention are described herein in terms of the blendedcomponents, with the understanding that the chemical composition (orrange of compositions) of the resulting CMP slurry is the necessaryresult of chemical processes occurring between and among the blendedcomponents under the conditions specified. Thus, descriptions herein ofthe components blended to form a CMP slurry are intended to encompassthe chemical species resulting from such blending under the condition(or set of conditions) specified.

One example of component concentrations for Composition A is shown inthe following Table I.

Composition A Component Concentration

TABLE I Typical Composition A Component Component Concentration AluminaAbrasive 2 weight % (“wt %”) Periodic Acid 0.1 mol/1 kg DI WaterRemaining weight amount to obtain final desired amount of Composition A

Thus, for example, a 10 kilogram mixture of Composition A may beprepared by combining 200 grams of an alumina (whether alpha-, gamma-,or a combination of alpha- and gamma-alumina) abrasive, 1 mole ofperiodic acid and the remaining of amount DI water. One form ofalpha-alumina abrasive advantageously used in connection with somecompositions herein is the commercial product “CR-30” manufactured byBaikowski Chimie Co. of Annacey Cedex 9, France. Other sources ofalpha-alumina, as well as sources of gamma-alumina or alpha- andgamma-alumina, may also be utilized.

pH Ranges

Composition A typically has a pH range from about 1 to about 2.5, andfavorably (in terms of performance), a pH of about 1.5.

Preparation

Generally, Composition A is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water and subsequently adding theperiodic acid (H₅IO₆). The composition is typically stirred continuouslywithin the container during at least the time of the preparation of thecomposition.

CMP Process

A typical example of the mixing ratio, process, pH and removal rateassociated with Composition A is set forth in Table A, in which “A/min”denotes Angstroms (10⁻¹⁰ meter) of material removed per minute ofprocessing.

Mixing Ratio, Process, pH and Removal Rate

TABLE A Ir Removal Rate Mixing Ratio Process pH (A/min) 2 wt %Alpha-Alumina Abrasive 4/0/50/51/150 1.5-2.5 288 0.1 mol/1 kg PeriodicAcid DI Water

In the example of Table A, the CMP process was carried out using an IPEC472 polisher and employing a down force pressure of 4 psi, a backpressure of 0 psi, a table speed of 50 rpm, a carrier speed of 51 rpm,and a composition flow rate of 150 ml/min. A stacked pad of IC-1000 overa Suba IV was used as the polishing pad on the primary platen of thepolisher, and a Polytex pad was used as the buff pad on the secondaryplaten of the polisher. Composition A was stirred thoroughly before andduring its use.

When employed according to the process of Table A, Composition Aprovided an Ir removal rate of approximately 288 Angstroms per minute.Additionally, Composition A provided an Ir removal rate of approximately375 Angstroms per minute when carried out according to theabove-described process (as set forth in Table A) with one variation,namely, applying a higher down force pressure of 6 psi. Furthermore,Composition A provided an Ir removal rate of approximately 400 Angstromsper minute when carried out according to the process set forth in TableA with one variation, namely, applying a higher table speed of 70 rpm.Generally, high removal rates (in terms of the material targeted forremoval) are preferred.

Ir Polishing Compositions Including Titration with TMAH

Composition B

Other Ir polishing compositions (such as “Composition B”) pursuant tosome embodiments of the present invention comprise an alumina abrasive(alpha-, gamma-, or both), periodic acid (H₅IO₆), DI water, and apH-adjusting agent, or a base, typically tetramethylammonium hydroxide(TMAH). One example of component concentrations for Composition B isshown in Table II.

Composition B Component Concentration

TABLE II Typical Composition B Component Component ConcentrationAlpha-Alumina Abrasive 2 wt % Periodic Acid 0.1 mol/kg DI WaterRemaining weight amount to obtain final desired amount of Composition BTetramethylammonium Hydroxide Titrate with TMAH to a pH of (TMAH)approximately between 6 and 7

By way of example, a 10 kilogram mixture of Composition B may beprepared by combining 200 grams of an alumina abrasive, 1 mole ofperiodic acid and the remaining amount of DI water. This mixture is thentitrated with the titration agent TMAH to obtain a final pH of about 6to about 7.

pH Ranges

Composition B typically has a pH range from about 6 to about 7 and,advantageously (in terms of performance), a pH of about 7.

Preparation

Generally, Composition B is prepared by adding the alumina abrasive to acontainer of DI water and subsequently adding the periodic acid (H₅IO₆).This mixture is then titrated with TMAH to obtain a final pH value ofabout 6 to about 7. Composition B is advantageously continuously stirredwithin the container during at least the period of compositionpreparation.

CMP Process

An example of the mixing ratio, process, pH and removal rate associatedwith Composition B is set forth in Table B.

Mixing Ratio, Process, pH and Removal Rate

TABLE B Ir Removal Mixing Ratio Process pH Rate (A/min) 2 wt %Alpha-Alumina Abrasive 4/0/50/51/150 6-7 325 0.1 mol/1 kg Periodic AcidDI Water Titrate with TMAH to a pH of approximately 7

In the example of Table B, the CMP process was carried out using an IPEC472 polisher and employing a down force pressure of 4 psi, a backpressure of 0 psi, a table speed of 50 rpm, a carrier speed 51 rpm, anda composition flow rate of 150 ml/min. A stacked pad of IC-1000 over aSuba IV was used as the polishing pad on the primary platen, and aPolytex pad was used as the buff pad on the secondary platen.Composition B was stirred thoroughly before and during its use.

When employed according to the above-described process, Composition Bprovided an Ir removal rate of approximately 325 Angstroms per minute.

Ir Polishing Compositions Including Titration with NH₄OH

Composition C

Other Ir polishing compositions (such as “Composition C”) pursuant tosome embodiments of the present invention are comprised of an alumina(alpha-, gamma-, or both) abrasive, periodic acid (H₅IO₆), DI water, anda pH-adjusting agent or a base, such as ammonium hydroxide (NH₄OH). Oneexample of component concentrations for Composition C is shown below inTable III.

Composition C Component Concentration

TABLE III Typical Composition C Component Component ConcentrationAlpha-Alumina Abrasive 2 wt % Periodic Acid 0.1 mol/1 kg DI WaterRemaining weight amount to obtain final desired amount of Composition CAmmonium Hydroxide (NH₄OH) Titrate with NH₄OH to a pH of approximately 7

By way of example, 200 grams of an alumina abrasive, 1 mole of periodicacid and the remaining amount of DI water may be combined to provide a10 kilogram mixture of Composition C. This mixture is then titrated withtitration agent NH₄OH to obtain a final pH of about 6 to about 7.

pH Ranges

Composition C typically has a pH range from about 6 to about 7 and afavorable pH of about 7.

Preparation

Generally, Composition C is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water and subsequently adding theperiodic acid (H₅IO₆). This mixture is then titrated with the titrationagent NH₄ OH to obtain a final pH value of about 7. Composition C isadvantageously stirred continuously within the container during at leastthe period of composition preparation.

CMP Process

An example of the mixing ratio, process, pH, removal rate andselectivity associated with Composition C is set forth in Table C.

Mixing Ratio, Process, pH, Removal Rate, and Selectivity

TABLE C Ir Removal Rate Ir:TEOS Mixing Ratio Process pH (A/min)Selectivity 2 wt % Alpha-Alumina 5/0/90/50/150 6-7 360 1.8:1 Abrasive0.1 mol/1 kg Periodic Acid Remaining % DI Water Titrate with NH₄OH to apH of approximately 7

In the example of Table C, the CMP process was carried out using an IPEC472 polisher and employing a down force pressure of 5 psi, a backpressure of 0 psi, a table speed of 90 rpm, a carrier speed 50 rpm, anda composition flow rate of 150 ml/min. A stacked pad of IC-1000 over aSuba IV was used as the polishing pad on the primary platen, and aPolytex pad was used as the buff pad on the secondary platen.Composition C was stirred thoroughly before and during its use.

When employed according to the process of Table C, Composition Cprovided an Ir removal rate of approximately 360 Angstroms per minute.The Ir removal rates were compared with tetraethoxysilane (TEOS) removalrates, yielding a Ir:TEOS selectivity of 1.8:1. Generally speaking, highselectivity ratios (in terms of the material targeted for removal toanother material) are preferred.

Composition D

According to some embodiments of the present invention, other Irpolishing compositions (such as “Composition D”) are comprised of analumina (alpha-, gamma-, or both) abrasive, periodic acid (H₅IO₆), DIwater and a pH-adjusting agent or base such as ammonium hydroxide(NH₄OH). Illustrative component concentrations for Composition D areshown in the following Table IV.

Composition D Component Concentration

TABLE IV Typical Composition D Component Component ConcentrationAlpha-Alumina Abrasive 2 wt % Periodic Acid 0.1 mol/1 kg DI WaterRemaining weight amount to obtain final desired amount of Composition DAmmonium Hydroxide (NH₄OH) Titrate with NH₄OH to a pH of approximately 3

By way of example, 200 grams of alumina abrasive, 1 mole of periodicacid and the remaining amount DI water may be combined to provide a 10kilogram mixture of Composition D. This mixture is then titrated withtitration agent NH₄OH to obtain a final pH of about 3.

pH Ranges

Composition D typically has a pH range from about 2 to about 4 and afavorable pH value of about 3.

Preparation

Generally, Composition D is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water and subsequently adding theperiodic acid (H₅IO₆). This mixture is then titrated with NH₄OH toobtain a final pH value of about 3. Composition D is favorablycontinuously stirred within the container during at least the time ofcomposition preparation.

CMP Process

One example of the mixing ratio, process, pH, removal rate and Ir:TEOSselectivity associated with Composition D is set forth in Table D.

Mixing Ratio, Process, pH, Removal Rate and Selectivity

TABLE D Ir Removal Rate Ir:TEOS Mixing Ratio Process pH (A/min)Selectivity 2 wt % Alpha-Alumina 5/0/90/50/150 3-4 320 1:1.5 Abrasive0.1 mol/1 kg Periodic Acid Remaining % DI Water Titrate with NH₄OH to apH of approximately 3

In the example set forth in Table D, the CMP process was carried outusing an IPEC 472 polisher and employing a down force pressure of 5 psi,a back pressure of 0 psi, a table speed of 90 rpm, a carrier speed 50rpm, and a composition flow rate of 150 ml/min. A stacked pad of IC-1000over a Suba IV was used as the polishing pad on the primary platen, anda Polytex pad was used as the buff pad on the secondary platen.Composition D was stirred thoroughly before and during its use.

When employed according to the above-described process (as set forth inTable D), Composition D provided an Ir removal rate of approximately 320Angstroms per minute. The Ir removal rates were compared withtetraethoxysilane (TEOS) removal rates, yielding a Ir:TEOS selectivityof 1:1.5.

Ir Polishing Compositions Including Suspension Agents

Other examples of Ir polishing compositions pursuant to some embodimentsof the present invention comprise one or more agents for making animproved suspension. Typically such suspension-improving agents(hereinafter, “suspension agents”) include abrasives.

Composition E

For example, some such Ir polishing compositions (such as “CompositionE”) comprise the components of Composition D and a second abrasive as asuspension agent. By way of example, in some such Ir polishingcompositions the second abrasive may be Alumina-C as a 15% suspension.Alumina-C is a product, Aluminumoxid C (CAS #1344-28-1), of Deguss-HulsAG, which is used to keep the slurry in suspension for a suitable, andpreferably long period. One example of component concentrations forComposition E is set forth in Table V.

Composition E Component Concentration

TABLE V Typical Composition E Component Component ConcentrationAlpha-Alumina Abrasive 2 wt % Periodic Acid 0.1 mol/1 kg DI WaterRemaining weight amount to obtain final desired amount of Composition EAmmonium Hydroxide (NH₄OH) Titrate with NH₄OH to a pH of approximately 3Alumina-C (15% suspension) 0.9 wt %pH Ranges

Composition E typically has a pH range from about 2 to about 4 and,advantageously, a pH of about 3.

Preparation

Generally, Composition E is prepared by adding the alpha-aluminaabrasive (such as CR-30) to a container of DI water and subsequentlyadding the periodic acid (H₅IO₆). This mixture is then titrated with NH₄OH to obtain a final pH value of about 3. Finally, the second abrasiveis added. Continuous stirring is maintained during at least the periodof composition preparation.

CMP Process

An example of the mixing ratio, process, pH, removal rate andselectivity associated with Composition E is set forth in Table E.

Mixing Ratio, Process, pH, Removal Rate, and Selectivity

TABLE E Ir Removal Rate Ir:TEOS Mixing Ratio Process pH (A/min)Selectivity 2 wt % Alpha-Alumina Abrasive 5/0/90/50/ 3-4 260 1:2.2 0.1mol/1 kg Periodic Acid 150 Remaining % DI Water Titrate with NH₄OH to apH of approximately 3 0.9 wt % Second Abrasive (e.g., Alumina-C)

In the example set forth in Table E, the CMP process was carried outusing an IPEC 472 polisher and employing a down force pressure of 5 psi,a back pressure of 0 psi, a table speed of 90 rpm, a carrier speed of 50rpm, and a composition flow rate of 150 ml/min. A stacked pad of IC-1000over a Suba IV was used as polishing pad on the primary platen, and aPolytex pad was used as the buff pad on the secondary platen.Composition E was stirred thoroughly before and during its use.

When employed according to the process of Table E, Composition Eprovided an Ir removal rate of approximately 260 Angstroms per minute.The Ir removal rates were compared with tetraethoxysilane (TEOS) removalrates, yielding a Ir:TEOS selectivity of 1:2.2.

Composition F

Other Ir polishing compositions (such as “Composition F”) pursuant tothe some embodiments of the present invention comprise the components ofComposition C and a second abrasive as a suspension agent. In one suchcomposition, a slurry suspension agent, Laponite (a product ofSouthwestern Clay Co. of Gonzales, Tex.) was used. Laponite is typicallyhydrous sodium lithium magnesium fluoro-silicate (Laponite B), hydroussodium lithium magnesium silicate (Laponite D, RD, ED, HB, G, XLG),hydrous sodium lithium magnesium silicate modified with tetra sodiumpyrophosphate (Laponite DS, RDS, XLS, S, JS, MS), or hydrous sodiumlithium magnesium silicate treated to give a fluoride loading of 2000ppm (Laponite DF). Although any of the types of Laponite can be usedwith comparable results, Laponite B was used in the example describedbelow.

One example of component concentrations for Composition F is shown inTable VI.

Composition F Component Concentration

TABLE VI Typical Composition F Component Component ConcentrationPeriodic Acid 2.3 grams, or 0.1 mol/1 kg DI Water 76 grams AmmoniumHydroxide (NH₄OH) Titrate the above components with NH₄OH to a pH ofapproximately 7 DI Water 8 grams Laponite 0.5 grams (Second Abrasive)Alpha-Alumina Abrasive 12.5 grams, or about 2 wt % (CR-30 @ 16 wt %)(First Abrasive)Preparation

In one example, Composition F is prepared by combining an “Oxidizer A”,described below, and an “Abrasive A”, also described below. In thepreparation of Oxidizer A, the periodic acid (H₅IO₆) is added to acontainer of DI water (76 grams). This mixture is then titrated withpH-adjusting agent or titration agent NH₄OH to a final pH value of about7. This resultant mixture is referred to herein as Oxidizer A. AbrasiveA is prepared by adding the Laponite and the alumina abrasive to eightgrams of DI water. Oxidizer A is added to Abrasive A to produceComposition F. Continuous stirring is maintained during at least theperiod of composition preparation.

Composition G

Other Ir polishing compositions (such as “Composition G”) pursuant tosome embodiments of the present invention comprise the components ofComposition C and a slurry suspension agent, such as the surfactantDarvan C. Darvan C is a commercial ammonium polymethacrylate aqueoussolution sold by R. T. Vanderbilt Company, Inc. of Norwalk, Conn.

One example of component concentrations for Composition G is set forthin Table VII.

Composition G Component Concentration

TABLE VII Typical Composition G Component Component ConcentrationPeriodic Acid 2.3 grams, or 0.1 mol/1 kg DI Water 76 grams AmmoniumHydroxide (NH₄OH) Titrate the above components with NH₄OH to a pH ofapproximately 7 DI Water 8 grams Darvan C 0.5 grams Alpha-AluminaAbrasive 12.5 grams, or about 2 wt % (CR-30 @ 16 wt %) (First Abrasive)Preparation

In one example, Composition G is prepared by combining Oxidizer A and“Abrasive B”, as described below. Oxidizer A is prepared as previouslydescribed in relation to Composition F. Abrasive B is prepared by addingthe Darvan C and the alumina abrasive to eight grams of DI water.Oxidizer A is added to Abrasive B to produce Composition G. Continuousstirring is maintained during the composition preparation.

Composition H

Other Ir polishing compositions (such as “Composition H”) pursuant tosome embodiments of the present invention comprise the components ofComposition C and a second abrasive as a suspension agent. In someembodiments, the second abrasive is LUDOX™-50. LUDOX™-50 is a commercialcolloidal silica abrasive of E. I. Du Pont de Nemours and Company,having advantageous properties in terms of particle size andcontribution to composition suspension and stability.

One example of component concentrations for Composition H is set forthin Table VIII.

Composition H Component Concentration

TABLE VIII Typical Composition H Component Component ConcentrationPeriodic Acid 2.3 grams, or 0.1 mol/1 kg DI Water 76 grams AmmoniumHydroxide (NH₄OH) Titrate the above components with NH₄OH to a pH ofapproximately 7 DI Water 8 grams LUDOX TM-50 0.5 grams (Second Abrasive)Alpha-Alumina Abrasive 12.5 grams, or about 2 wt % (CR-30 @ 16 wt %)(First Abrasive)Preparation

Generally, Composition H is prepared by combining Oxidizer A and“Abrasive C”, as described below. Oxidizer A is prepared as previouslydescribed. Abrasive C is prepared by adding the LUDOX™-50 (the secondabrasive) and the alumina abrasive (the first abrasive) to eight gramsof DI water. Oxidizer A is added to Abrasive C to produce Composition H.Continuous stirring is maintained during at least the compositionpreparation.

Composition I

Other Ir polishing compositions (such as “Composition I”) pursuant tosome embodiments of the present invention comprise the components ofComposition C and a slurry suspension agent. In some embodiments, thesuspension agent is ethyl carbonate. One example of componentconcentrations for Composition I is set forth in Table IX.

Composition I Component Concentration

TABLE IX Typical Composition I Component Component ConcentrationPeriodic Acid 2.3 grams, or 0.1 mol/1 kg DI Water 76 grams AmmoniumHydroxide (NH₄OH) Titrate the above components with NH₄OH to a pH ofapproximately 7 DI Water 8 grams Ethyl Carbonate 0.5 grams Alpha-AluminaAbrasive 12.5 grams, or about 2 wt % (CR-30 @ 16 wt %)Preparation

In one example, Composition I is prepared by combining Oxidizer A and“Abrasive D”, as described below. Oxidizer A is prepared as previouslydescribed. Abrasive D is prepared by adding the ethyl carbonate and thealumina abrasive to eight grams of DI water. Oxidizer A is added toAbrasive D to produce Composition I. Continuous stirring is maintainedduring the composition preparation.

Composition J

Other Ir polishing compositions (such as “Composition J”) pursuant tosome embodiments of the present invention comprise the components ofComposition C and an organic acid as a suspension agent. In oneembodiment, the organic acid is succinic acid. In other embodiments,alternative water soluble organic acids (e.g. mono-, di-, andtri-functional acids) can be used, as can other suspension agents orsurfactants that act to suspend the abrasive. One example of componentconcentrations for Composition J is set forth in Table X.

Composition J Component Concentration

TABLE X Typical Composition J Component Component Concentration PeriodicAcid 2.3 grams, or 0.1 mol/1 kg DI Water 76 grams Ammonium Hydroxide(NH₄OH) Titrate the above components with NH₄OH to a pH of approximately7 DI Water 7.5 grams Succinic acid 1.0 grams Alpha-Alumina Abrasive 12.5grams, or about 2 wt % (CR-30 @ 16 wt %)Preparation

In one example, Composition J is prepared by combining Oxidizer A and“Abrasive E”. Oxidizer A is prepared as previously described. Abrasive Eis prepared by adding the succinic acid (as an exemplary organic acid)and the alumina abrasive to 7.5 grams of DI water. Oxidizer A is addedto Abrasive E to produce Composition J. Continuous stirring ismaintained during the composition preparation.

Composition K

Other Ir polishing compositions (such as “Composition K”) pursuant tothe present invention comprise the components of Composition C and asecond abrasive as a suspension agent. In some embodiments, the secondabrasive is an alumina abrasive in the form of “CR-140”. Cr-140 is acommercial abrasive product manufactured by Baikowski Chimie Co. ofAnnacey Cedex 9, France, believed to comprise about 95% gamma-aluminaand about 5% alpha-alumina. One example of component concentrations forComposition K is set forth in the Table XI.

Composition K Component Concentration

TABLE XI Typical Composition K Component Component ConcentrationPeriodic Acid 2.3 grams, or 0.1 mol/1 kg DI Water 76 grams AmmoniumHydroxide (NH₄OH) Titrate the above components with NH₄OH to a pH ofapproximately 7 DI Water 3.5 grams CR-140 @ 20 wt % 5.0 grams (SecondAbrasive) Alpha-Alumina Abrasive 12.5 grams, or about 2 wt % (CR-30 @ 16wt %) (First Abrasive)Preparation

In one example, Composition K is prepared by combining Oxidizer A(prepared as previously described) and “Abrasive F”. Abrasive F isprepared by adding CR-140 (the second abrasive) and CR-30 (the firstabrasive) to 3.5 grams of DI water. Oxidizer A is added to Abrasive F toproduce Composition K. Continuous stirring is maintained during thecomposition preparation.

Preparation conditions associated with Compositions F through K are setforth below in Table 1.

Compositions F Through K Preparation Conditions

TABLE 1 Second First Stir Stir Composition DI Water Abrasive AbrasiveTime Oxidizer Time Composition F 8 grams 0.5 grams 12.5 2 hours 79grams >20 min. Laponite grams, or of Oxidizer A about 2 wt % CompositionG 8 grams 0.5 grams 12.5 2 hours 79 grams >20 min. Darvan C grams, or ofOxidizer A about 2 wt % Composition H 8 grams 0.5 grams 12.5 2 hours 79grams >20 min. LUDOX grams, or of Oxidizer A TM-50 about 2 wt %Composition I 8 grams 0.5 grams 12.5 2 hours 79 grams >20 min. Ethylgrams, or of Oxidizer A Carbonate about 2 wt % Composition J 7.5 grams  1.0 grams 12.5 2 hours 79 grams >20 min. Succinic acid grams, or ofOxidizer A about 2 wt % Composition K 3.5 grams   5 grams CR- 12.5 2hours 79 grams >20 min. 140 (20% wt) grams, or of Oxidizer A about 2 wt%

Table 2 below sets forth the pH, settling time, Ir removal rate andIr:TEOS selectivity associated with Compositions F through K. As usedherein, settling time refers to the time it takes for a homogenousslurry mixture to settle in an ambient environment so that a clear toplayer is formed. In these examples, the unit of measure for settlingtime is millimeters of clear liquid (i.e., the depth of the clear toplayer measured from the top of the original homogenous mixture) in agiven unit of time. For instance, a settling time of 9 mm/10 minindicates that a 9 mm deep layer of clear liquid was formed after 10minutes of standing in an ambient environment. Generally, a suitableslurry, such as any of the examples of Compositions F through K, shouldnot settle in a relatively “hard” or packed manner such that the slurrycan't be resuspended with minimal agitation.

For Ir polishing, Composition H is preferred in view of its favorable Irremoval rate of 240 A/min, and more particularly, its favorable 3.9:1Ir:TEOS selectivity, which relatively high selectivity is believed toplay an important role at the end of the polishing step.

pH, Settling Time, Ir Removal Rate and Selectivity for Compositions FThrough K

TABLE 2 Settling Time Ir Removal Rate Ir:TEOS Composition pH (mm/min)(A/min) Selectivity Composition F 7.3  9 mm/10 min 240 2.7:1 CompositionG 7.3  9 mm/10 min 340 2.1:1 Composition H 7.3  9 mm/10 min 240 3.9:1Composition I 7.3  9 mm/10 min 350 2.3:1 Composition J 6.7  5 mm/2 hrs80 1:1.3 Composition K 6.9 10 mm/10 min 230 3.4:1

Each of the CMP processes set forth in Table 2 above was carried outusing an IPEC 576 polisher with a Thomas West XY pad and employing adown force pressure of 4 psi, a back pressure of 0 psi, a table orplaten speed of 200 rpm, a carrier speed of 18 rpm, and a compositionflow rate of 150 ml/min. Compositions F through K were stirredthoroughly before and during their use.

IrO₂ Polishing Compositions

Composition L (for Polishing IrO₂)

Iridium oxide (IrO₂) polishing compositions (such as “Composition L”)pursuant to some embodiments of the present invention comprise analumina (alpha-, gamma-, or both) abrasive, hydrazine hydrate(NH₂—NH₂.H₂O), and DI water. Hydrazine hydrate is believed to contributeto the polishing of the noble metal oxide. Further, it is believed thatthe caustic hydrazine hydrate may also serve as a reducing agent,although this effect may be slight or minimal. According to the presentinvention, an IrO₂ polishing composition should have a pH of from aboutpH 5 to about pH 10, preferably, from about pH 7 to about pH 9. Anexample of component concentrations for Composition L is set forth belowin Table XII.

Composition L Component Concentration

TABLE XII Typical Composition L Component Component ConcentrationAlpha-Alumina Abrasive 2 wt % (CR-30) Hydrazine hydrate 0.1 mol/1 kg DIWater Remaining weight amount to obtain final desired amount ofComposition LpH Ranges

Composition L typically has pH level of pH 8 or greater, such as fromabout pH 8 to about pH 10 and, advantageously, from about pH 9 to aboutpH 9.5.

Preparation

Generally, Composition L is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water and subsequently adding thehydrazine hydrate. Composition L is typically continuously stirredwithin the container during at least the period of compositionpreparation.

CMP Process

An example of the mixing ratio, process, pH and removal rate associatedwith Composition L is set forth below in Table L.

Mixing Ratio, Process, pH and Removal Rate

TABLE L IrO₂ Removal Rate Mixing Ratio Process pH (A/min) 2 wt %Alpha-Alumina Abrasive 4/0/50/51/150 9-9.5 880 0.1 mol/1 kg Hydrazinehydrate DI Water

In the example set forth in Table L, the CMP process was carried outusing an IPEC 472 polisher and employing a down force pressure of 4 psi,a back pressure of 0 psi, a table speed of 50 rpm, a carrier speed 51rpm, and a composition flow rate of 150 ml/min. A stacked pad of IC-1000over a Suba IV was used as the polishing pad on the primary platen ofthe polisher, and a Polytex pad was used as buff pad on the secondaryplaten of the polisher. Composition L was stirred thoroughly before andduring its use.

When employed according to the process set forth in Table L, CompositionL provided an IrO₂ removal rate of approximately 880 Angstroms perminute.

Another example of component concentrations for Composition L (denotedas “Composition L(a)”) is shown below in Table XIIa.

Composition L(a) Component Concentration

TABLE XIIa Typical Composition L(a) (additional embodiments) ComponentComponent Concentration Alpha-Alumina Abrasive 2 wt % (CR-30) Hydrazinehydrate 0.05 mol/kg DI Water Remaining weight amount to obtain finaldesired amount of Composition LpH Ranges

The example of Table XIIa has a favorable pH value of about 9.

CMP Process

An example of the mixing ratio, process, pH and removal rate associatedwith Composition L(a) is set forth below in Table L(a).

Mixing Ratio, Process, pH and Removal Rate

TABLE L(a) IrO₂ Removal Rate Mixing Ratio Process pH (A/min) 2 wt %Alpha-Alumina Abrasive 4/0/50/51/150 9 740 0.05 mol/1 kg Hydrazinehydrate DI Water

In the example set forth in Table L(a), the CMP process was carried outusing an IPEC 472 polisher and employing a down force pressure of 4 psi,a back pressure of 0 psi, a table speed of 50 rpm, a carrier speed of 51rpm, and a composition flow rate of 150 ml/min. A stacked pad of IC-1000over a Suba IV was used as the polishing pad on the primary platen ofthe polisher, and a Polytex pad was used as buff pad on the secondaryplaten of the polisher. The above Composition L(a) was stirredthoroughly before and during its use.

When employed according to the process of Table L(a), Composition L(a)provided an IrO₂ removal rate of approximately 740 Angstroms per minute.

Composition M (for Polishing IrO₂)

Other iridium oxide (IrO₂) polishing compositions (such as “CompositionM”) pursuant to some embodiments of the present invention are comprisedof an alumina (alpha-, gamma, or both) abrasive, tetramethylammoniumhydroxide (TMAH), and DI water. TMAH is believed to contribute to thepolishing of the noble metal oxide. An example of componentconcentrations for Composition M is set forth below in Table XIII.

Composition M Component Concentration

TABLE XIII Typical Composition M Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 2 wt % Tetramethylammonium 0.1 mol/1 kgHydroxide DI Water Remaining weight amount to obtain final desiredamount of Composition MpH Ranges

Composition M typically has a pH level of pH 8 or greater, such as in arange from about pH 9 to about pH 11 and, favorably, of about pH 10.

Preparation

Generally, Composition M is prepared by adding the alpha-aluminaabrasive (CR-30) to a container of DI water and subsequently addingtetramethylammonium hydroxide (TMAH). Composition M is preferablycontinuously stirred within the container during at least thecomposition preparation.

CMP Process

An example of the mixing ratio, process, pH and removal rate associatedwith Composition M is set forth below in Table M. For IrO₂ polishing,Composition M is preferred in view of its favorable IrO₂ removal rate of635 A/min.

Mixing Ratio, Process, pH and Removal Rate

TABLE M IrO₂ Removal Mixing Ratio Process pH Rate (A/min) 2 wt %Alpha-Alumina Abrasive 4/0/50/51/150 10 635 0.1 mol/kgTetramethylammonium Hydroxide DI Water

In the example set forth in Table M, the CMP process was carried outusing an IPEC 472 polisher and employing a down force pressure of 4 psi,a back pressure of 0 psi, a table speed of 50 rpm, a carrier speed of 51rpm, and a composition flow rate of 150 ml/min. A stacked pad of IC-1000over a Suba IV was used as the polishing pad on the primary platen ofthe polisher, and a Polytex pad was used as buff pad on the secondaryplaten of the polisher. The Composition M of the example was stirredthoroughly before and during its use.

When employed according to the above process, Composition M provided anIrO₂ removal rate of approximately 635 Angstroms per minute.

Another example of component concentrations for Composition M (denotedherein as “Composition M(a)”) is set forth below in Table XIIIa.

Composition M(a) Component Concentration

TABLE XIIIa Typical Composition M(a) Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 2 wt % Tetramethylammonium 0.03 mol/1 kgHydroxide DI Water Remaining weight amount to obtain final desiredamount of Composition MpH Ranges

Composition M(a) has an advantageous pH range from about 9 to about 10.

CMP Process

An example of the mixing ratio, process, pH and removal rate forComposition M(a) is set forth below in Table M(a).

Mixing Ratio, Process and Removal Rate

TABLE M(a) IrO2 Removal Mixing Ratio Process pH Rate (A/min) 2 wt %Alpha-Alumina Abrasive 4/0/50/51/150 9-10 320 0.03 mol/kgTetramethylammonium Hydroxide DI water

In the example set forth in Table M(a), the CMP process was carried outusing an IPEC 472 polisher and employing a down force pressure of 4 psi,a back pressure of 0 psi, a table speed of 50 rpm, a carrier speed of 51rpm, and a composition flow rate of 150 ml/min. A stacked pad of IC-1000over a Suba IV was used as the polishing pad on the primary platen ofthe polisher, and a Polytex pad was used as buff pad on the secondaryplaten of the polisher. The Composition M(a) of this example was stirredthoroughly before and during its use.

When employed according to the process of Table M(a), Composition M(a)provided an IrO₂ removal rate of approximately 320 Angstroms per minute.

Platinum (Pt) Polishing Compositions

Composition N

Platinum (Pt) polishing compositions (such as “Composition N”) pursuantto some embodiments of the present invention comprise an aluminaabrasive (alpha-, gamma-, or both), periodic acid (H₅IO₆), and DI water.Thus, Composition N is comprised of the same components as CompositionA. An example of component concentrations for Composition N is set forthbelow in Table XIV.

Composition N Component Concentration

TABLE XIV Typical Composition N Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 2 wt % Periodic Acid 0.1 mol/1 kg DIWater Remaining weight amount to obtain final desired amount ofComposition NpH Ranges

Composition N advantageously has a pH value of about 1.6.

Preparation

Generally, Composition N is prepared by adding water the aluminaabrasive (such as CR-30) to a container of DI and subsequently addingthe periodic acid (H₅IO₆). Composition N is advantageously stirredcontinuously within the container during at least the period ofcomposition preparation.

CMP Process

An example of the mixing ratio, process, pH, removal rates andselectivity associated with Composition N is set forth in Table N.

Mixing Ratio, Process, pH, Removal Rates, and Selectivity

TABLE N Removal Removal Rate Rate (A/min) (A/min) Pt:BPSG Mixing RatioProcess pH Pt BPSG Selectivity 2 wt % Alpha- 2/200/18/150 1.6 131 1801:1.5 Alumina Abrasive 0.1 mol/1 kg Periodic Acid DI water

In the example set forth in Table N, the CMP process was carried outusing an IPEC 576 polisher with a Thomas West XY pad and employing adown force pressure of 2 psi, a table or platen speed of 200 rpm, acarrier speed of 18 rpm, and a composition flow rate of 150 ml/min.Composition N was stirred thoroughly before and during its use.

When employed according to the process of Table N, Composition Nprovides a Pt removal rate of 131 A/min and a Boron Phosphorous SilicateGlass (BPSG) removal rate of 180 A/min, demonstrating a Pt:BPSGselectivity of 1:1.5.

Composition O

Other platinum polishing compositions (such as “Composition O”) pursuantto some embodiments of the present invention comprise an alumina(alpha-, gamma-, or both) abrasive, periodic acid (H₅IO₆), ammoniumchloride (NH₄CI), and DI water. It is believed that the electrolyte,ammonium chloride, serves as a source of chloride ions that assist inmetal etching. One example of component concentrations for Composition Ois set forth below in Table XV.

Composition O Component Concentration

Component Component Concentration Alpha-Alumina Abrasive (CR-30) 2 wt %Periodic Acid 0.1 mol/1 kg Ammonium Chloride 0.1 mol/1 kg DI WaterRemaining weight amount to obtain final desired amount of Composition OpH Ranges

Composition O typically has a pH range from about 1.2 to about 1.8 and afavorable pH value of about 1.6.

Preparation

Generally, Composition O is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water, then adding the periodicacid (H₅IO₆), and then adding the ammonium chloride. Composition O isadvantageously stirred continuously within the container during thecomposition preparation.

CMP Process

An example of the mixing ratio, process, pH, removal rates andselectivity for Composition O is set forth below in Table O.

Mixing Ratio, Process, pH, Removal Rates and Selectivity

TABLE O Pt Removal Removal Rate Rate (A/min) Pt:BPSG Mixing RatioProcess pH (A/min) BPSG Selectivity 2 wt % Alpha- 2/200/18/150 1.6 44356 8:1 Alumina Abrasive 0.1 mol/kg Periodic Acid 0.1 mol/kg AmmoniumChloride DI Water

The CMP process of Table O for Composition O was carried out using anIPEC 576 polisher with a Thomas West XY pad and employing a down forcepressure of 2 psi, a table or platen speed of 200 rpm, a carrier speedof 18 rpm, and a composition flow rate of 150 ml/min. Composition O wasstirred thoroughly before and during its use.

Composition O, when employed according to the process of Table O,Composition O provides a Pt removal rate of 443 A/min and a BPSG removalrate of 56 A/min, demonstrating a Pt:BPSG selectivity of 8:1.

Composition P

Other platinum polishing compositions (such as “Composition P”) pursuantto some embodiments of the present invention comprise an alumina(alpha-, gamma-, or both) abrasive, periodic acid (H₅IO₆), ammoniumchloride (NH₄CI), and DI water. One example of component concentrationsfor Composition P is set forth below in Table XVI.

Composition P Component Concentration

TABLE XVI Typical Composition P Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 6 wt % Periodic Acid 0.1 mol/1 kgAmmonium Chloride 0.1 wt % DI Water Remaining weight amount to obtainfinal desired amount of Composition PpH Ranges

Composition P advantageously has a pH range from about 1.5 to about 2.

Preparation

Generally, Composition P is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water, then adding the periodicacid (H₅IO₆), and then adding the ammonium chloride (NH₄CI). CompositionP is favorably continuously stirred within the container during at leastthe composition preparation.

CMP Processes

Several examples of the processes and removal rates for Composition Pare set forth below in Table P.

Processes and Removal Rates

TABLE P Process Pt Removal Rate (A/min) 2/200/18/70 220 4/200/18/70 4706/200/18/70 750 7/200/18/70 1,020

The CMP processes set forth in Table P were carried out using an IPEC576 polisher with a Thomas West XY pad and employing a down forcepressure of 2 psi, 4 psi, 6 psi and 7 psi, respectively. All processesfurther employed a table or platen speed of 200 rpm, a carrier speed of18 rpm, and a composition flow rate of 70 ml/min. Composition P wasstirred thoroughly before and during its use.

When employed according to the processes set forth in Table P,Composition provides Pt removal rates of 220 A/min, 470 A/min, 750A/min, and 1,020 A/min, respectively.

Composition Q

Other platinum polishing compositions (such as “Composition Q”) pursuantto some embodiments of the present invention comprise an aluminaabrasive (alpha-, gamma-, or both), ammonium chloride (NH₄CI), and DIwater.

Composition Q Component Concentration

TABLE XVII Typical Composition Q Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 2 wt % Ammonium Chloride 0.1 mol/1 kg DIWater Remaining weight amount to obtain final desired amount ofComposition QpH Ranges

The present Composition Q advantageously has a general pH range fromabout 5 to about 6 and a favorable pH of about 5.4.

Preparation

Generally, Composition Q is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water and then adding the ammoniumchloride. Composition Q is typically stirred continuously within thecontainer during the composition preparation.

CMP Process

An example of the mixing ratio, process, pH, removal rates andselectivity associated with Composition Q is set forth below in Table Q.For Pt polishing, Composition Q is preferred in view of its favorable Ptremoval rate of 1598 A/min and its favorable Pt:BPSG selectivity of11:1.

Mixing Ratio, Process, pH, Removal Rates and Selectivity

TABLE Q Pt Removal Removal Rate Rate (A/min) Pt:BPSG Mixing RatioProcess pH (A/min) BPSG Selectivity 2 wt % Alpha- 2/0/200/ 5.4 1598 14511:1 Alumina Abrasive 18/150 0.1 mol/kg Ammonium Chloride DI Water

The CMP process set forth in Table Q was carried out using an IPEC 576polisher with a Thomas West XY pad and employing a down force pressureof 2 psi, a back pressure of 0 psi, a table or platen speed of 200 rpm,a carrier speed of 18 rpm, and a composition flow rate of 150 ml/min.Composition Q is advantageously stirred thoroughly before and during itsuse.

When employed according to the process of Table Q, Composition Qprovides a Pt removal rate of 1,598 A/min and a BPSG removal rate of 145A/min, demonstrating a Pt:BPSG selectivity of approximately 11:1.

Composition R

Other Pt polishing compositions (such as “Composition R”) pursuant tosome embodiments of the present invention comprise an alumina (alpha-,gamma-, or both) abrasive, hydrochloric acid (HCI) and DI water. It isbelieved that the hydrochloric acid serves as a source of chloride ionsthat assist in the etching of metal. One example of componentconcentrations for Composition R is set forth below in Table XVIII.

Composition R Component Concentration

TABLE XVIII Typical Composition R Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 2 wt % Hydrochloric Acid 0.1 mol/kg DIWater Remaining weight amount to obtain final desired amount ofComposition RpH Ranges

Composition R typically has a pH range from about 1.0 to about 2.0 and afavorable pH of about 1.2.

Preparation

Generally, Composition R is prepared by adding the alumina abrasive(CR-30) to a container of DI water and subsequently adding thehydrochloric acid. Composition R is favorably continuously stirredwithin the container during at least the composition preparation,

CMP Process

An example of the mixing ratio, process, pH, removal rates andselectivity for Composition R is set forth below in Table R.

Mixing Ratio, Process, pH, Removal Rates and Selectivity

TABLE R Pt BPSG Removal Removal Rate Rate Pt:BPSG Mixing Ratio ProcesspH (A/min) (A/min) Selectivity 2 wt % Alpha- 2/0/200/18 1.2 334 26 13:1Alumina Abrasive 0.1 mol/kg Hydrochloric Acid DI WaterCMP Processes:

The CMP process for Composition R of Table R was carried out using anIPEC 576 polisher with a Thomas West XY pad and employing a down forcepressure of 2 psi, a back pressure of 0 psi, a table or platen speed of200 rpm, a carrier speed of 18 rpm, and a composition flow rate of 150ml/min. Composition R was stirred thoroughly before and during its use.

When employed according to the process of Table R, Composition Rprovides a Pt removal rate of 334 A/min and a BPSG removal rate of 26A/min, demonstrating a Pt:BPSG selectivity of 13:1.

Composition S

Other Pt polishing compositions (such as “Composition S”) pursuant tosome embodiments of the present invention comprise an alumina (alpha-,gamma-, or both) abrasive, hydrochloric acid (HCI), ammonium chloride(NH₄CI), and DI water. One example of component concentrations forComposition S is set forth below in Table XIX.

Composition S Component Concentration

TABLE XIX Typical Compositions Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 2 wt % Hydrochloric acid 0.1 mol/1 kgAmmonium Chloride 0.1 mol/1 kg DI Water Remaining weight amount toobtain final desired amount of Composition SpH Ranges

Composition S typically has a pH range from about 1 to about 2 and,favorably, a pH of about 1.4.

Preparation

Generally, Composition S is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water, then adding the hydrochloricacid, and then adding the ammonium chloride (NH₄CI). Composition S isadvantageously stirred continuously within the container during at leastthe composition preparation.

CMP Process

An example of the mixing ratio, process, pH and removal rate forComposition S is set forth in Table S.

Mixing Ratio, Process and Removal Rate

TABLE S Pt Removal Rate Mixing Ratio Process pH (A/min) 2 wt %Alpha-Alumina Abrasive 4/0/200/18/70 1.4 310 0.1 mol/1 kg Hydrochloricacid 0.1 mol/1 kg Ammonium Chloride DI Water

The CMP process set forth in Table S was carried out using an IPEC 576polisher with a Thomas West XY pad and employing a down force pressureof 4 psi, a back pressure of 0 psi, a table or platen speed of 200 rpm,a carrier speed of 18 rpm, and a composition flow rate of 70 ml/min.Composition S was stirred thoroughly before and during its use.

When employed according to the process set forth in Table S, CompositionS provides a Pt removal rate of 310 A/min.

Composition T

Other platinum polishing compositions (such as “Composition T”) pursuantto some embodiments of the present invention comprise an alumina(alpha-, gamma-, or both) abrasive, hydroxylamine (HDA), and DI water.It is believed that the caustic HDA serves as a mild reducing agent. Anexample of component concentrations for Composition T is set forth belowin Table XX.

Composition T Component Concentration

TABLE XX Typical Composition T Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 2 wt % Hydroxylamine 0.1 mol/1 kg DIWater Remaining weight amount to obtain final desired amount ofComposition TpH Ranges

Composition T typically has a pH range from about 8 to about 9 andadvantageously a pH of about 8.5.

Preparation

Generally, Composition T is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water and then adding thehydroxylamine. Composition T is advantageously stirred continuouslywithin the container during the composition preparation.

CMP Process

An example of the mixing ratio, process, pH, removal rates andselectivity for Composition T is set forth below in Table T.

Mixing Ratio, Process, pH, Removal Rates and Selectivity

TABLE T Removal Removal Rate Rate (A/min) (A/min) Pt:BPSG Mixing RatioProcess pH Pt BPSG Selectivity 2 wt % Alpha- 4/0/50/51/150 8.5 209 4321:2 Alumina Abrasive 0.1 mol/kg Hydroxylamine DI water

In the example set forth in Table T, the CMP process was carried outusing an IPEC 472 polisher and employing a down force pressure of 4 psi,a back pressure of 0 psi, a table speed of 50 rpm, a carrier speed 51rpm, and a composition flow rate of 150 ml/min. An IC-1000 k-grooved padwas used as the polishing pad on the primary platen of the polisher, anda Polytex pad was used as buff pad on the secondary platen of thepolisher. Composition T was stirred thoroughly before and during itsuse.

When employed according to the process of Table T, Composition Tprovides a Pt removal rate of 209 A/min and a BPSG removal rate of 432A/min, demonstrating a Pt:BPSG selectivity of 1:2.

Composition U

Other preferred Platinum polishing compositions (such as “CompositionU”) pursuant to the present invention comprise an alumina abrasive(alpha-, gamma-, or both), hydroxylamine hydrochloride (NH₂OH.HCl), andDI water. It is believed that the hydroxylamine hydrochloride serves asan oxidizing agent. One example of component concentrations forComposition U is set forth below in Table XXI.

Composition U Component Concentration

TABLE XXI Typical Composition U Component Component ConcentrationAlpha-Alumina Abrasive (CR-30) 2 wt % NH₂OH•HCl 0.1 mol/1 kg DI WaterRemaining weight amount to obtain final desired amount of Composition UpH Ranges

Composition U typically has a pH range from about 3.5 to about 4.5 andfavorably a pH of about 4.

Preparation

Generally, Composition U is prepared by adding the alumina abrasive(such as CR-30) to a container of DI water and then adding thehydroxylamine hydrochloride (NH₂OH.HCl). Composition U is advantageouslystirred continuously within the container during at least thecomposition preparation.

CMP Process

An example of the mixing ratio, process, removal rate and selectivityfor Composition U is set forth in Table U below.

Mixing Ratio, Process, pH, Removal Rates and Selectivity

TABLE U Pt Removal Removal Rate Rate (A/min) Pt:BPSG Mixing RatioProcess pH (A/min) BPSG Selectivity 2 wt % Alpha- 2/0/200/18/150 4 39370 5.6:1 Alumina Abrasive 0.1 mol/kg NH₂OH•HCl DI water

The CMP process set forth in Table U was carried out using an IPEC 576polisher with a Thomas West XY pad and employing a down force pressureof 2 psi, a back pressure of 0 psi, a table or platen speed of 200 rpm,a carrier speed of 18 rpm, and a composition flow rate of 150 ml/min.Composition U is advantageously stirred thoroughly before and during itsuse.

When employed according to the process of Table U, Composition Uprovides a Pt removal rate of 393 A/min and a BPSG removal rate of 70A/min, demonstrating a Pt:BPSG selectivity of approximately 5.6:1.

Those skilled in the art will appreciate that, given the presentdisclosure, modifications may be made to the invention without departingfrom the spirit of the inventive concept described herein. Therefore, itis not intended that the scope of the invention be limited to thespecific embodiments illustrated and described.

1. A method for polishing a substrate surface having at least onefeature thereon comprising a noble metal, said method comprising: a)providing a substrate comprising submicron integrated circuits andhaving a surface having at least one feature thereon comprising a noblemetal selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Ag,Au, alloys thereof, oxides thereof, and combinations thereof; b)providing a chemical mechanical polishing composition comprising:periodic acid in an amount from about 0.05 to about 0.3 moles/kilogramand an abrasive; and c) polishing said substrate surface with saidchemical mechanical polishing composition, wherein said periodic acidand said abrasive are present in a combined amount sufficient to renderthe substrate surface substantially planar and wherein the polishing ismaintained at a polishing rate of between 300 Angstroms per minute toabout 2000 Angstroms per minute.
 2. The method of claim 1, wherein theperiodic acid is present in an amount from about 0.075 to about 0.3moles/kilogram.
 3. The method of claim 1, wherein the abrasive ispresent in an amount from about 0.2 to about 6 weight percent.
 4. Themethod of claim 1, wherein the abrasive comprises an abrasive selectedfrom the group consisting of alumina, silica, zirconia, spinel,zirconium nitride, and combinations thereof.
 5. The method of claim 1,wherein the noble metal is selected from the group consisting of Ir,IrO₂, Pt, and combinations thereof.
 6. The method of claim 1, whereinsaid chemical mechanical polishing composition is sufficient to providethe substrate surface with a wafer-within-wafer-nonuniformity (WWNU) ofless than about 12% upon polishing of the substrate surface with thechemical mechanical polishing composition.
 7. The method of claim 1,wherein said chemical mechanical polishing composition is sufficient toprovide the substrate surface with a wafer-to-wafer-nonuniformity(WTWNU) of less than about 5%.
 8. The method of claim 1, wherein thenoble metal is selected from the group consisting of Ru, a Ru alloy, anda Ru oxide.
 9. The method of claim 1, further comprising a pH-adjustingagent, wherein the pH is from about pH 1 to about pH
 10. 10. The methodof claim 9, wherein the composition consists essentially of water,periodic acid, an abrasive, and a pH-adjusting agent is selected fromthe group consisting of a quaternary amine, an inorganic base, andcombinations thereof.
 11. The method of claim 9, wherein thepH-adjusting agent comprises an agent selected from the group consistingof tetramethylammonium hydroxide, ammonium hydroxide, potassiumhydroxide, sodium hydroxide, and combinations thereof.
 12. The method ofclaim 1, further comprising a suspension agent.
 13. The method of claim12, wherein the suspension agent comprises an agent selected from thegroup consisting of an organic acid, a surfactant, a second abrasive,ammonium polymethacylate, hydrous sodium lithium magnesium silicate,ethyl carbonate and combinations thereof.
 14. A method for polishing asubstrate surface having at least one feature thereon comprising a noblemetal, said method comprising: a) providing a substrate having asurface, wherein said surface comprises a dielectric material andcontaining at least one feature thereon comprising a noble metalselected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Ag, Au,alloys thereof, oxides thereof, and combinations thereof; b) providing achemical mechanical polishing composition comprising periodic acid in anamount from about 0.05 to about 0.3 moles/kilogram; and an abrasive inan amount from about 0.2 to about 6 weight percent, said polishingcomposition having a pH from above pH 5 to about pH 10; and c) polishingsaid substrate surface with said chemical mechanical polishingcomposition wherein on polishing the substrate surface with thepolishing composition a selectivity of the polishing composition forpolishing the noble metal over polishing the dielectric material is atleast 1:1.
 15. The method of claim 14, wherein the amount of periodicacid is from about 0.075 to about 0.3 moles/kilogram.
 16. The method ofclaim 14, wherein the amount of the abrasive is from about 0.2 to about6 weight percent.
 17. The method of claim 14, wherein the pH is fromabout pH 6 to about pH
 10. 18. The method of claim 14, wherein theabrasive comprises an abrasive selected from the group consisting ofalumina, silica, zirconia, spinel, zirconium nitride, and combinationsthereof.
 19. The method of claim 14, wherein said composition providesthe substrate surface with a wafer-to-wafer-nonuniformity (WTWNU) ofless than about 5% upon chemical-mechanical polishing thereof.
 20. Themethod of claim 14, wherein the noble metal is selected from the groupconsisting of Ir, IrO₂, Pt, and combinations thereof.
 21. The method ofclaim 14, further comprising a pH-adjusting agent.
 22. The method ofclaim 21, wherein the pH-adjusting agent is selected from the groupconsisting of a quaternary amine, an inorganic base, and any compositionthereof.
 23. The method of claim 21, wherein the pH-adjusting agentcomprises an agent selected from the group consisting oftetramethylammonium hydroxide, ammonium hydroxide, potassium hydroxide,sodium hydroxide, and combinations thereof.
 24. The method of claim 14,further comprising a suspension agent.
 25. The method of claim 24,wherein the suspension agent comprises an agent selected from the groupconsisting of an organic acid, a surfactant, a second abrasive, ammoniumpolymethacylate, hydrous sodium lithium magnesium silicate, and ethylcarbonate.
 26. A method for polishing a substrate surface having atleast one feature thereon comprising a noble metal, said methodcomprising: a) providing a substrate having a surface, wherein saidsurface comprises a dielectric material and has at least one featurethereon comprising a noble metal selected from the group consisting ofRu, Rh, Pd, Os, Ir, Pt, Ag, Au, alloys thereof, oxides thereof, andcombinations thereof; b) providing a chemical mechanical polishingcomposition consisting essentially of (i) water; (ii) periodic acid inan amount from about 0.05 to about 0.3 moles/kilogram; (iii) an abrasivein an amount from about 0.2 to about 6 weight percent; (iv) apH-adjusting agent in an amount sufficient to cause the pH of thecomposition to be between about 1 to about 10; and (v) a suspensionagent; and c) polishing said substrate surface with said chemicalmechanical polishing composition.
 27. The method of claim 26, whereinthe noble metal is selected from the group consisting of Ir, IrO₂, Pt,and combinations thereof.
 28. The method of claim 26, wherein the noblemetal comprises gold.
 29. The method of claim 26, wherein the noblemetal comprises silver.
 30. The method of claim 26, wherein the abrasivecomprises an abrasive selected from the group consisting of alumina,silica, zirconia, spinel, zirconium nitride, and combinations thereof.31. The method of claim 26, wherein the substrate further comprises adielectric material, and wherein the selectivity of the composition forpolishing the noble metal over polishing the dielectric material is atleast 1:1.
 32. The method of claim 26, wherein the pH-adjusting agent isselected from the group consisting of a quaternary amine, an inorganicbase, and combinations thereof.
 33. The method of claim 26 wherein thepH-adjusting agent is added in an amount sufficient to cause the pH ofthe composition to be between about 1 to about
 4. 34. The method ofclaim 26 wherein the pH-adjusting agent is added in an amount sufficientto cause the pH of the composition to be between about 5 to about 10.35. The method of claim 26, wherein the suspension agent is selectedfrom the group consisting of an organic acid, surfactant, ethylcarbonate, aluminum oxide, hydrous sodium lithium magnesium silicate,ammonium polymethacrylate, and a second abrasive.
 36. The method ofclaim 35, wherein the organic acid is succinic acid.
 37. The method ofclaim 35, wherein the second abrasive is silica.